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Not for new design, this product will be obsoleted soon
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
1
SOT23
Features
* * * * * Low noise figure High power gain e3 Small collector capacitance Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
2 1
SOT23
3
Applications
Wide band, low noise, small signal amplifiers up to UHF frquencies, high speed logic applications and oscillator applications.
3 1
2
SOT323
Mechanical Data
Typ: BFS17A Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: E2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFS17AR Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: E5 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFS17AW Case: SOT-323 Plastic case Weight: approx. 6.0 mg Marking: WE2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter
2 3
19150
Electrostatic sensitive device. Observe precautions for handling.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 60 C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 15 2.5 25 200 150 - 65 to + 150 Unit V V V mA mW C C
Document Number 85039 Rev. 1.6, 08-Sep-08
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BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors Maximum Thermal Resistance
Parameter Junction ambient
1) 1)
Test condition
Symbol RthJA
Value 450
Unit K/W
on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu
Electrical DC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage Test condition VCE = 25 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 1 mA, IB = 0 IC = 20 mA, IB = 2 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE hFE 20 20 15 0.1 100 0.6 150 Min Typ. Max 100 100 10 Unit A nA A V V
DC forward current transfer ratio VCE = 1 V, IC = 2 mA VCE = 1 V, IC = 25 mA
Electrical AC Characteristics
Tamb = 25 C, unless otherwise specified Parameter Transition frequency Test condition VCE = 5 V, IC = 2 mA, f = 300 MHz VCE = 5 V, IC = 14 mA, f = 300 MHz VCE = 5 V, IC = 30 mA, f = 300 MHz Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Power gain Linear output voltage - two tone intermodulation test Third order intercept point VCB = 10 V, f = 1 MHz VCE = 5 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 5 V, IC = 2 mA, ZS = 50 , f = 800 MHz VCE = 10 V, IC = 14 mA, ZS = 50 , f = 800 MHz VCE = 10 V, IC = 14 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 VCE = 10 V, IC = 14 mA, f = 800 MHz Symbol fT fT fT Ccb Cce Ceb F Gpe V1 = V2 3 Min Typ. 1.5 3.5 3.2 0.6 0.1 1.1 2.5 13 150 Max Unit GHz GHz GHz pF pF pF dB dB mV
IP3
23.5
dBm
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Document Number 85039 Rev. 1.6, 08-Sep-08
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
Common Emitter S-Parameters
Z0 = 50 , Tamb = 25 C, unless otherwise specified VCE/V IC/mA f/MHz LIN MAG 5 2 100 300 500 800 1000 1200 1500 1800 2000 5 5 100 300 500 800 1000 1200 1500 1800 2000 5 10 100 300 500 800 1000 1200 1500 1800 2000 5 15 100 300 500 800 1000 1200 1500 1800 2000 5 20 100 300 500 800 1000 1200 1500 1800 2000 0.829 0.672 0.544 0.457 0.442 0.444 0.463 0.474 0.493 0.658 0.485 0.409 0.370 0.369 0.373 0.397 0.417 0.440 0.480 0.376 0.355 0.336 0.336 0.343 0.370 0.393 0.420 0.390 0.344 0.340 0.332 0.333 0.336 0.367 0.391 0.416 0.342 0.337 0.340 0.333 0.334 0.342 0.371 0.398 0.423 S11 ANG deg -29.5 -79.5 -113.6 -145.4 -160.1 -172.5 172.1 159.0 153.0 -45.1 -106.3 -139.6 -166.3 -177.7 173.9 162.7 152.7 148.7 -65.1 -130.2 -158.2 -179.7 171.9 165.2 157.2 149.1 147.0 -81.5 -143.8 -167.0 174.4 167.1 161.9 155.3 147.4 145.8 -95.6 -152.5 -172.8 170.8 164.8 159.2 153.9 147.0 144.8 6.22 4.80 3.54 2.43 2.03 1.77 1.49 1.31 1.22 12.07 7.43 4.93 3.23 2.65 2.28 1.89 1.64 1.52 17.64 8.89 5.66 3.63 2.95 2.53 2.09 1.80 1.66 20.46 9.34 5.87 3.74 3.04 2.60 2.14 1.84 1.70 21.91 9.44 5.85 3.74 3.03 2.59 2.14 1.84 1.69 LIN MAG S21 ANG deg 158.9 126.1 105.6 88.0 79.5 72.2 61.7 52.3 45.0 149.5 113.4 96.8 82.7 75.8 69.3 60.3 51.7 44.4 139.7 105.3 91.6 79.6 73.5 67.7 59.3 50.9 44.0 133.8 101.4 89.3 78.1 72.2 66.7 58.5 50.6 43.6 129.4 99.0 87.8 77.0 71.4 65.9 57.8 49.7 42.8 0.028 0.064 0.078 0.087 0.093 0.101 0.117 0.142 0.168 0.025 0.048 0.061 0.080 0.094 0.110 0.136 0.166 0.193 0.020 0.039 0.055 0.081 0.098 0.117 0.145 0.177 0.204 0.018 0.036 0.054 0.081 0.100 0.119 0.149 0.181 0.207 0.016 0.035 0.053 0.081 0.100 0.120 0.149 0.181 0.207 LIN MAG S12 ANG deg 74.2 53.3 45.2 45.7 49.6 54.0 60.6 65.5 65.6 69.6 55.1 55.7 61.4 64.1 66.3 68.2 68.2 65.2 67.8 62.6 66.2 69.7 70.8 71.2 70.8 69.0 65.1 67.5 66.9 70.8 73.0 73.1 72.8 71.8 69.5 65.3 68.3 70.3 73.6 75.0 74.4 73.9 72.7 70.2 65.8 0.965 0.812 0.707 0.648 0.639 0.634 0.619 0.596 0.559 0.909 0.668 0.572 0.537 0.540 0.540 0.529 0.510 0.479 0.833 0.570 0.499 0.484 0.492 0.497 0.486 0.470 0.445 0.780 0.532 0.476 0.470 0.481 0.485 0.476 0.461 0.437 0.743 0.515 0.469 0.469 0.482 0.485 0.476 0.461 0.438 LIN MAG S22 ANG deg -8.9 -19.2 -21.7 -22.5 -23.9 -26.6 -31.5 -36.2 -39.7 -14.4 -23.0 -21.6 -19.7 -20.6 -23.3 -28.0 -31.5 -33.4 -19.2 -22.9 -19.4 -16.6 -17.6 -20.5 -25.1 -28.2 -29.1 -21.3 -21.6 -17.3 -14.7 -15.9 -19.2 -23.7 -26.8 -27.5 -21.9 -19.9 -16.0 -13.6 -15.1 -18.4 -23.1 -26.2 -27.0
Document Number 85039 Rev. 1.6, 08-Sep-08
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BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
VCE/V IC/mA f/MHz LIN MAG 10 2 100 300 500 800 1000 1200 1500 1800 2000 10 5 100 300 500 800 1000 1200 1500 1800 2000 10 10 100 300 500 800 1000 1200 1500 1800 2000 10 15 100 300 500 800 1000 1200 1500 1800 2000 10 20 100 300 500 800 1000 1200 1500 1800 2000 0.827 0.651 0.534 0.457 0.437 0.438 0.441 0.454 0.470 0.658 0.462 0.390 0.355 0.353 0.357 0.372 0.390 0.406 0.492 0.351 0.321 0.310 0.316 0.324 0.344 0.362 0.380 0.411 0.318 0.305 0.302 0.304 0.318 0.336 0.360 0.376 0.365 0.311 0.305 0.305 0.312 0.322 0.344 0.366 0.381 S11 ANG deg -29.0 -76.2 -108.9 -140.7 -157.5 -170.6 173.7 160.4 152.5 -43.5 -102.5 -133.9 -161.4 -174.5 175.4 163.3 153.6 146.9 -61.8 -126.2 -153.8 -175.0 174.4 166.7 157.6 149.3 143.7 -76.1 -140.0 -162.9 178.7 170.3 163.9 155.2 147.7 142.5 -88.4 -149.1 -169.0 175.4 167.2 161.4 154.1 146.6 141.8 6.37 4.81 3.58 2.51 2.09 1.81 1.51 1.31 1.22 12.32 7.51 5.05 3.35 2.74 2.34 1.94 1.67 1.54 18.05 9.08 5.81 3.77 3.06 2.60 2.15 1.85 1.70 21.04 9.59 6.01 3.87 3.14 2.67 2.19 1.89 1.73 22.59 9.67 6.00 3.85 3.12 2.65 2.18 1.87 1.72 LIN MAG S21 ANG deg 157.9 126.6 107.7 90.1 81.4 73.8 64.2 56.1 50.8 148.9 114.5 98.6 84.2 77.2 70.8 62.6 55.0 50.3 139.5 106.1 92.9 80.8 74.6 68.9 61.3 54.3 49.6 133.5 102.1 90.2 79.1 73.2 67.8 60.4 53.8 49.0 129.0 99.5 88.5 78.0 72.4 66.9 59.6 52.9 48.3 0.024 0.053 0.065 0.073 0.079 0.086 0.099 0.119 0.136 0.021 0.041 0.052 0.068 0.081 0.094 0.115 0.139 0.157 0.018 0.034 0.047 0.069 0.084 0.100 0.124 0.149 0.167 0.016 0.031 0.046 0.070 0.085 0.102 0.126 0.151 0.169 0.014 0.029 0.045 0.069 0.085 0.102 0.126 0.151 0.170 LIN MAG S12 ANG deg 73.1 53.9 47.2 48.8 52.7 57.8 65.6 71.8 74.9 69.7 55.8 57.2 63.2 66.6 69.3 72.2 74.0 74.5 66.6 62.3 67.0 71.5 73.1 74.0 74.8 75.0 74.3 66.5 67.0 71.4 74.7 75.5 75.8 75.9 75.6 75.0 65.8 69.8 73.6 76.2 76.9 76.8 76.6 76.2 75.5 0.965 0.835 0.759 0.712 0.701 0.695 0.688 0.685 0.681 0.913 0.711 0.645 0.618 0.613 0.613 0.610 0.607 0.604 0.846 0.628 0.584 0.573 0.575 0.575 0.575 0.572 0.571 0.799 0.596 0.565 0.563 0.565 0.569 0.568 0.567 0.564 0.765 0.586 0.564 0.564 0.570 0.571 0.571 0.570 0.568 LIN MAG S22 ANG deg -7.7 -15.4 -17.6 -19.4 -21.1 -23.4 -27.4 -32.3 -35.5 -12.5 -18.3 -17.4 -17.8 -19.3 -21.5 -25.5 -30.1 -33.4 -16.3 -17.5 -15.3 -15.4 -17.0 -19.5 -23.5 -28.1 -31.3 -17.7 -15.9 -13.5 -14.1 -15.8 -18.2 -22.5 -27.0 -30.4 -18.1 -14.4 -12.3 -13.3 -15.1 -17.8 -22.1 -26.9 -30.1
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Document Number 85039 Rev. 1.6, 08-Sep-08
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified)
300
Ptot - Total Power Dissipation (mW)
5 F - Noise Figure ( dB ) 4 3 2 1 0 V CE = 5 V f = 800 MHz ZS = 50 0
13607
250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Tamb - Ambient Temperature (C)
5
96 12159
10 15 20 25 I C - Collector Current ( mA )
30
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Noise Figure vs. Collector Current
f T - Transition Frequency ( MHz )
4000 3500 3000 2500 2000 1500 1000 500 0 0 5 V CE = 5 V f = 300 MHz 10 15 20 25 I C - Collector Current ( mA ) 30
13605
Figure 2. Transition Frequency vs. Collector Current
Ccb - Collector Base Capacitance ( pF )
1.0 0.8 0.6 0.4 0.2 f = 1 MHz 0.0 0 4 8 12 16 20 V CB - Collector Base Voltage ( V )
13606
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
Document Number 85039 Rev. 1.6, 08-Sep-08
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BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
VCE = 8 V, IC = 25 mA, Z0 = 50 S11
j j0.5 j2 150 j0.2 2.0 GHz 0 0.2 1.0 0.3 -j0.2 0.1 -j0.5
13550
S21
90 120 0.1 0.3 60
30
j5
1
2
5
180
2.0 GHz 10
20
0
-j5 -150 -j2 -30
-j
-120
13552
-60 -90
Figure 5. Input Reflection Coefficient
Figure 7. Forward Transmission Coefficient
S12
90 120 1.5 150 1.0 0.5 180 0.1 0.08 0.16 0 30
S22
j j0.5 j2
2.0 GHz
j0.2
j5
0
0.2
0.5
1
0.8 5 2.0 GHz
0.1 -j5
-j0.2 -150 -30 -j0.5 -120
13551
-j2 -j
-60 -90
13553
Figure 6. Reverse Transmission Coefficient
Figure 8. Output Reflection Coefficient
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Document Number 85039 Rev. 1.6, 08-Sep-08
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors Package Dimensions in mm (Inches)
1.15 (0.045) 2.6 (0.102) 2.35 (0.092)
0.175 (0.007) 0.098 (0.005) 0.1 (0.004) max. 0.4 (0.016) 0.4 (0.016)
0.95 (0.037)
ISO Method E
3.1 (0.122) 2.8 (0.110) 0.4 (0.016) C 1.43 (0.056) 1.20 (0.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
B 0.95 (0.037)
E 0.95 (0.037) 0.95 (0.037) 0.95 (0.037)
9511346
Package Dimensions in mm (Inches)
1.15 (0.045) 2.6 (0.102) 2.35 (0.092)
0.175 (0.007) 0.098 (0.005) 0.1 (0.004) max. 0.4 (0.016) 0.4 (0.016)
0.95 (0.037)
ISO Method E
3.1 (0.122) 2.8 (0.110) 0.4 (0.016) C 1.43 (0.056) 1.20 (0.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
E 0.95 (0.037)
B 0.95 (0.037) 0.95 (0.037) 0.95 (0.037)
9511346
Document Number 85039 Rev. 1.6, 08-Sep-08
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BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors Package Dimensions in mm (Inches)
96 12236
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Document Number 85039 Rev. 1.6, 08-Sep-08
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85039 Rev. 1.6, 08-Sep-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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